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Rev. B 62, R16 322–R16 325. , and Klingshirn, C. (1994). Wurtzite-Type CdS and CdSe Epitaxial Layers – I. Growth and Characterization, J. Cryst. Growth 141, 68– 74. , and Klingshirn, C. (1992). Shift of the Excitonic Resonances by Thermal Strain and Lattice Mismatch in CdS Thin Epitaxial Layers, J. Cryst. Growth 125, 384–387. K. (1995). MicrojouleEnergy Ultrafast Optical Parametric Amplifiers, J. Opt. Soc. Am. B 12, 2229–2236. P. (1984). Negative Dispersion Using Pairs of Prisms, Opt. Lett. 9, 150–152.
Note that absolutely no harmonics are generated after the two cycles of the optical pulse (see Fig. 1(b)). Here one merely has a free oscillation of the optical polarization with the optical transition frequency of the two-level system Ω. e. one or two optical cycles long, and very intense optical pulses. From the anticipated signal levels and the anticipated damage thresholds of thin films of semiconductors, high repetition rate laser systems are strongly favored. Thus, we perform our experiments with 5 fs linearly polarized (p-polarization) optical pulses at 81 MHz (=1/12 ns) repetition rate, which have recently become available .
Two aspects seem very important in this context. First, it is likely that, in the experiment, the pulses within the sample are modified with respect to Carrier-wave Rabi flopping in semiconductors 37 the incident pulses. This might explain why the splitting between the two maxima in the third-harmonic spectra of the experiment is roughly a factor of two smaller than expected from the above modeling. Second, theory has to explain, why the damping of states far above the band gap becomes as short as one femtosecond and below.