Aspects of chemical evolution: XVIIth Solvay Conference on by Gregoire Nicolis

By Gregoire Nicolis

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Extra info for Aspects of chemical evolution: XVIIth Solvay Conference on Chemistry, Washington, D.C., April 23-April 24, 1980

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While a variety of subtle functional and chemical differences separate these photoresists, many of their primary imaging and etching characteristics are similar. This stems from the fact that all current positive photoresists are based upon the original formulation and photochemistry of the Kalle material. Novolac resins possess desirable dissolution characteristics in aqueous bases in that they show no swelling. They are soluble in a wide variety of common organic solvents, and can be coated from solution to form uniform films of high quality.

25 μπι). With a high numerical aperture S & R camera lens, the aperture exposure is >80% of that in the large areas. This example neglects the secondary influences such as depth-of-field, resist contrast etcetera, but realistically describes the ease of finding exposure and development conditions that are satisfactory for the full range of pattern shapes. Figure 12 shows the more favorable case of electron beam exposure of the multilayer siloxane resist. Here, the exposure due to backscattered electrons is reduced from 86% to 50% of the primary exposure, and the imaging layer is very thin.

Moore, R. D. J. Vac. Sci. Technol. 1981, 19, 950. Broers, A. N. J. Electrochem. Soc. 1981, 128, 166. Chang, T. H. P. J. Vac. Sci. Technol. 1975, 12, 127. Boersch, H. Z. Phys. 1954, 139, 115. Grobman, W. ; Speth, A. Proc. 8th Internat. Conf. : Princeton, NJ, 1978; 276. Parasczak, J. J. Vac. Sci. , Β 1983, 1, 1372. Greeneich, J. S. J. Vac. Sci. Technol. 1979, 16, 1749. Broers, A. N. "Electron Microscopy 1978"; Sturgess, J. ; Microscop. Soc. ; Muray Broers, A. ; Pomerantz, M. Thin Solid Films, 99, 323.

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