By Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
This ebook offers entire assurance of the fabrics features, technique applied sciences, and gadget operations for reminiscence field-effect transistors utilizing inorganic or natural ferroelectric skinny motion pictures. This transistor-type ferroelectric reminiscence has fascinating primary equipment physics and very likely huge commercial impression.
Among many of the purposes of ferroelectric skinny motion pictures, the improvement of nonvolatile ferroelectric random entry reminiscence (FeRAM) has stepped forward such a lot actively because the past due Nineteen Eighties and has completed modest mass construction degrees for particular functions when you consider that 1995. There are varieties of reminiscence cells in ferroelectric nonvolatile stories. One is the capacitor-type FeRAM and the opposite is the field-effect transistor (FET)-type FeRAM. even if the FET-type FeRAM claims final scalability and nondestructive readout features, the capacitor-type FeRAMs were the most curiosity for the main semiconductor reminiscence businesses, as the ferroelectric FET has deadly handicaps of cross-talk for random accessibility and brief retention time.
This ebook goals to supply readers with the advance heritage, technical concerns, fabrication methodologies, and promising functions of FET-type ferroelectric reminiscence units, featuring a finished assessment of prior, current, and destiny applied sciences. the subjects mentioned will bring about additional advances in large-area electronics carried out on glass or plastic substrates in addition to in traditional Si electronics.
The publication consists of chapters written by way of prime researchers in ferroelectric fabrics and comparable machine applied sciences, together with oxide and natural ferroelectric skinny films.