Compact Modeling: Principles, Techniques and Applications by Gennady Gildenblat

By Gennady Gildenblat

Compact types of circuit parts are types which are sufficiently uncomplicated to be included in circuit simulators and are sufficiently actual to make the result of the simulators necessary to circuit designers. The conflicting goals of version simplicity and accuracy make the compact modeling box a thrilling and difficult examine sector for equipment physicists, modeling engineers and circuit designers.

The versions of MOS transistors underwent innovative switch within the previous couple of years and at the moment are in response to new ideas. the hot types of diodes, passive components, noise assets and bipolar transistors have been built alongside the extra conventional traces. Following this evolutionary improvement they turned hugely refined and masses extra able to mirror the elevated calls for of the complicated built-in circuit expertise. The latter is determined by the compact versions for the shortening of the layout cycle and taking away the weather of overdesign that is frequently bad in today’s aggressive setting. whilst, statistical modeling of semiconductor units got new value following the dramatic relief of the equipment dimensions and of the facility provide voltage. ultimately, regardless of the complexity of the fabrication method, the multi-gate MOS transistors are actually heavily thought of for the aim of controlling the small geometry effects.

Most of the hot texts on compact modeling are constrained to a selected category of semiconductor units and don't offer accomplished assurance of the sector. Having a unmarried entire reference for the compact versions of most typically used semiconductor units (both energetic and passive) represents an important virtue for the reader. certainly, a number of varieties of semiconductor units are in many instances encountered in one IC layout or in one modeling help team. Compact Modeling includes in general the fabric that when a number of years of IC layout functions has been discovered either theoretically sound and essentially major. Assigning the person chapters to the teams answerable for the definitive paintings at the topic assures the top attainable measure of craftsmanship on all of the coated models.

Compact Modeling additionally contains chapters at the MOSFET noise concept, benchmarking of MOSFET compact versions, modeling of the ability MOSFET, and an summary of the bipolar modeling box. It concludes with chapters describing the range modeling together with a few contemporary advancements within the field.

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Extra resources for Compact Modeling: Principles, Techniques and Applications

Sample text

The precise value of this energy is adjusted using model parameters [46]. With this approximation, analytical expressions for all components of the tunneling current can be obtained in a relatively simple form [24] sufficient to accurately reproduce the experimental device characteristics shown in Fig. 25. 1 Surface-Potential-Based Compact Model of Bulk MOSFET 31 Fig. 24 Energy-band diagram of an n-MOS in inversion Fig. 25 Gate current Ig as a function of Vgs at Vsb = 0 for different Vds . Symbols represent measurement and lines are the simulated results using PSP.

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