By Pietro Mandracci
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Extra resources for Crystalline and Non-crystalline Solids
This complex developed deposition technique is named as RF assisted pulsed laser deposition (RF-PLD) . The plasma beam source consists of a double chamber discharge system supplied by a RF power supply. In the active chamber, the discharge is generated in an oxygen flow between two parallel electrodes. 5772/62986 aperture drilled in the bottom electrode, which acts as a nozzle. RF-PLD is suitable for the synthesis of smooth and compact thin films of metal oxides or nanostructured thin films.
A reliable method for obtaining thin films of simple or complex compounds is pulsed laser deposition (PLD), also called laser ablation. PLD has gained worldwide acknowledgement as a reliable method for obtaining thin films of simple or complex materials. The PLD relies on the interaction of the laser beam with a target material (solid or liquid), thus producing a plasma plume through which the material is carried on a substrate, as a thin film. ), (c) the thickness of the film can be controlled by the number of pulses that irradiate the material, (d) the laser radiation can be focused/imaged in a very small spot which allows the selective processing regions of interest, (e) the transfer of the target to the substrate can produce new materials in metastable states, that are impossible to be achieved by other techniques.
Furthermore, SiO2 is a good refractory material, used as antireflective coating for laser optical components. In this work we focus on the deposition of SiO2 thin films to be used in antireflective coating applications. e. free of pores and droplets. SiO2 thin films are deposited either by irradiation with a Nd:YAG laser (operated at 266 nm) or an ArF laser (193 nm) of a silicon target (classical PLD). 5 J/cm2. The silicon substrates used as collectors are heated at 600°C during the depositions, and are set parallel to the target, at 4 cm distance.